Planar Multi-Gate Artificial Synaptic Transistor with Solution-Processed AlOx Solid Electric Double Layer Dielectric and InOx Channel

Multi-terminal artificial synaptic devices are promising for building neural morphological networks and manufacturing chips. In this study, planar multi-gate InOx-based transistor was demonstrated by using solution-processed AlOx as an electric double layer (EDL) dielectric with mobile hydrogen protons. The excitatory postsynaptic current (EPSC) successfully controlled adjusting amplitude, duration, interval of the stimulating voltage pulses applied on gates. EPSC stimulated multiple inputs shows property sublinear summation. As spatial resolution function transistor, depends presynaptic (planar gate) area distance to channel, nonlinearly. paired-pulse facilitation (PPF), depending time sequence, demonstrates temporal transistor. study potential AlOx/InOx EDL multi-terminal device.